PHOTOLUMINESCENCE STUDY OF INTERDIFFUSION IN IN0.53GA0.47AS/INP SURFACE QUANTUM-WELLS

被引：21

作者：

OSHINOWO, J ^{[1
]}

FORCHEL, A ^{[1
]}

GRUTZMACHER, D ^{[1
]}

STOLLENWERK, M ^{[1
]}

HEUKEN, M ^{[1
]}

HEIME, K ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,W-5100 AACHEN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 21期

关键词：

D O I：

10.1063/1.106887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the thermal stability and interdiffusion of In0.53Ga0.47As/InP surface quantum wells. In these structures the optically active InGaAs layer is bounded on one side by vacuum and on the other side by InP. We obtain well-defined photoluminescence emission spectra with high intensity. After rapid thermal annealing at temperatures between 500 and 900-degrees-C (annealing time 1 min) we observe strong emision energy shifts of up to 316 meV. By using a simple model of ion intermixing we estimate large interdiffusion coefficients (e.g., 1.7 x 10(-14) cm2 s-1 for T = 90-degrees-C) and an activation energy of 1.3 eV for the surface quantum wells.

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页码：2660 / 2662

页数：3

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