EVAPORATION OF ATOMS FROM FEMTOSECOND LASER-HEATED GALLIUM-ARSENIDE

被引：28

作者：

HERMES, P

DANIELZIK, B

FABRICIUS, N

VONDERLINDE, D

KUHL, J

HEPPNER, J

STRITZKER, B

POSPIESZCZYK, A

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH, D-7000 STUTTGART 80, FED REP GER

[2] FORSCHUNGSZENTRUM JULICH, D-5170 JULICH 1, FED REP GER

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 39卷 / 01期

关键词：

D O I：

10.1007/BF01177158

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9 / 11

页数：3

共 8 条

[1]

BLOEMBERGEN N, 1979, LASER SOLID INTERACT

[2]

FABRICIUS N, UNPUB

[3] PICOSECOND TIME-RESOLVED PLASMA AND TEMPERATURE-INDUCED CHANGES OF REFLECTIVITY AND TRANSMISSION IN SILICON [J].

LIU, JM ;

KURZ, H ;

BLOEMBERGEN, N .

APPLIED PHYSICS LETTERS, 1982, 41 (07) :643-646

[4] TIME-RESOLVED REFLECTIVITY MEASUREMENTS OF FEMTOSECOND-OPTICAL-PULSE INDUCED PHASE-TRANSITIONS IN SILICON [J].

SHANK, CV ;

YEN, R ;

HIRLIMANN, C .

PHYSICAL REVIEW LETTERS, 1983, 50 (06) :454-457

[5] FEMTOSECOND-TIME-RESOLVED SURFACE STRUCTURAL DYNAMICS OF OPTICALLY-EXCITED SILICON [J].

SHANK, CV ;

YEN, R ;

HIRLIMANN, C .

PHYSICAL REVIEW LETTERS, 1983, 51 (10) :900-902

[6]

Spaepen F., 1982, Laser annealing of semiconductors, P15

[7] MEASUREMENT OF LATTICE TEMPERATURE OF SILICON DURING PULSED LASER ANNEALING [J].

STRITZKER, B ;

POSPIESZCZYK, A ;

TAGLE, JA .

PHYSICAL REVIEW LETTERS, 1981, 47 (05) :356-358

[8] OBSERVATION OF AN ELECTRONIC PLASMA IN PICOSECOND LASER ANNEALING OF SILICON [J].

VONDERLINDE, D ;

FABRICIUS, N .

APPLIED PHYSICS LETTERS, 1982, 41 (10) :991-993

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