EVAPORATION OF ATOMS FROM FEMTOSECOND LASER-HEATED GALLIUM-ARSENIDE

被引:28
作者
HERMES, P
DANIELZIK, B
FABRICIUS, N
VONDERLINDE, D
KUHL, J
HEPPNER, J
STRITZKER, B
POSPIESZCZYK, A
机构
[1] MAX PLANCK INST FESTKORPERFORSCH, D-7000 STUTTGART 80, FED REP GER
[2] FORSCHUNGSZENTRUM JULICH, D-5170 JULICH 1, FED REP GER
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 39卷 / 01期
关键词
D O I
10.1007/BF01177158
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:9 / 11
页数:3
相关论文
共 8 条
[1]  
BLOEMBERGEN N, 1979, LASER SOLID INTERACT
[2]  
FABRICIUS N, UNPUB
[3]   PICOSECOND TIME-RESOLVED PLASMA AND TEMPERATURE-INDUCED CHANGES OF REFLECTIVITY AND TRANSMISSION IN SILICON [J].
LIU, JM ;
KURZ, H ;
BLOEMBERGEN, N .
APPLIED PHYSICS LETTERS, 1982, 41 (07) :643-646
[4]   TIME-RESOLVED REFLECTIVITY MEASUREMENTS OF FEMTOSECOND-OPTICAL-PULSE INDUCED PHASE-TRANSITIONS IN SILICON [J].
SHANK, CV ;
YEN, R ;
HIRLIMANN, C .
PHYSICAL REVIEW LETTERS, 1983, 50 (06) :454-457
[5]   FEMTOSECOND-TIME-RESOLVED SURFACE STRUCTURAL DYNAMICS OF OPTICALLY-EXCITED SILICON [J].
SHANK, CV ;
YEN, R ;
HIRLIMANN, C .
PHYSICAL REVIEW LETTERS, 1983, 51 (10) :900-902
[6]  
Spaepen F., 1982, Laser annealing of semiconductors, P15
[7]   MEASUREMENT OF LATTICE TEMPERATURE OF SILICON DURING PULSED LASER ANNEALING [J].
STRITZKER, B ;
POSPIESZCZYK, A ;
TAGLE, JA .
PHYSICAL REVIEW LETTERS, 1981, 47 (05) :356-358
[8]   OBSERVATION OF AN ELECTRONIC PLASMA IN PICOSECOND LASER ANNEALING OF SILICON [J].
VONDERLINDE, D ;
FABRICIUS, N .
APPLIED PHYSICS LETTERS, 1982, 41 (10) :991-993