DETERMINATION OF THE DENUDED ZONE IN CZOCHRALSKI-GROWN SILICON-WAFERS THROUGH MOS LIFETIME PROFILING

被引：5

作者：

PAZ, O

SCHNEIDER, CP

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 12期

关键词：

D O I：

10.1109/T-ED.1985.22423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2830 / 2838

页数：9

共 23 条

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