SYNTHESIS OF ALUMINUM-OXIDE THIN-FILMS - USE OF ALUMINUM TRIS-DIPIVALOYLMETHANATE AS A NEW LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION PRECURSOR

被引：27

作者：

CILIBERTO, E ^{[1
]}

FRAGALA, I ^{[1
]}

RIZZA, R ^{[1
]}

SPOTO, G ^{[1
]}

ALLEN, GC ^{[1
]}

机构：

[1] INTERFACE ANAL CTR,BRISTOL,AVON,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 11期

关键词：

D O I：

10.1063/1.114960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous aluminum oxide thin films have been produced with low pressure metal organic chemical vapor deposition technique using the aluminum tris-dipivaloylmethanate volatile precursor. Different carrier gases were used for the depositions. The surfaces of the films were analyzed using x-ray photoelectron spectroscopy and secondary ion mass spectrometry. A very low content of carbon was verified when oxygen and water vapor saturated argon were used as carrier gases. A higher hydration percentage of the deposited material was verified when water vapor was present during the deposition process. (C) 1995 American Institute of Physics.

引用

页码：1624 / 1626

页数：3

共 27 条

[21] AL2O3 FILMS FOR INTEGRATED-OPTICS [J].