CHARACTERIZATION AND GROWTH OF SIC EPILAYERS ON SI SUBSTRATES

被引：11

作者：

JOHNSON, BC

MEESE, JM

ZAJAC, GW

SCHREINER, JO

KADUK, JA

FLEISCH, TH

机构：

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1986年 / 2卷 / 03期

关键词：

D O I：

10.1016/0749-6036(86)90024-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：223 / 231

页数：9

共 14 条

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KLEIN, PH .

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[2]

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[3]

University of South Carolina in: Silicon Carbide, 1974, SILICON CARBIDE 1973

[4]

BELLINA JJ, UNPUB APPLIED SURFAC

[5] AUGER AND ELECTRON ENERGY-LOSS STUDY OF THE AL/SIC INTERFACE [J].

BERMUDEZ, VM .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :70-72

[6] SURFACE STUDIES OF EPITAXIAL BETA-SIC ON SI(100) [J].

KAPLAN, R .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1636-1641

[7]

LIAW HP, 1985, J ELECTROCHEM SOC, V132, P642

[8] CHEMICAL VAPOR-DEPOSITION OF SINGLE CRYSTALLINE BETA-SIC FILMS ON SILICON SUBSTRATE WITH SPUTTERED SIC INTERMEDIATE LAYER [J].

NISHINO, S ;

HAZUKI, Y ;

MATSUNAMI, H ;

TANAKA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) :2674-2680

[9] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J].

NISHINO, S ;

POWELL, JA ;

WILL, HA .

APPLIED PHYSICS LETTERS, 1983, 42 (05) :460-462

[10]

RAMAKER DE, 1985, APPL SURF SCI, V21, P243, DOI 10.1016/0378-5963(85)90021-2

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