ANALYTICAL CALCULATION OF THE QUANTUM-MECHANICAL TRANSMISSION COEFFICIENT FOR A TRIANGULAR, PLANAR-DOPED POTENTIAL BARRIER

被引：14

作者：

CHRISTODOULIDES, DN

ANDREOU, AG

JOSEPH, RI

WESTGATE, CR

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 08期

关键词：

D O I：

10.1016/0038-1101(85)90069-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：821 / 822

页数：2

共 8 条

[1]

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[2] QUANTUM-MECHANICAL REFLECTION AT TRIANGULAR PLANAR-DOPED POTENTIAL BARRIERS FOR TRANSISTORS [J].

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[3]

DUKE CB, 1969, SOLID STATE PHYSIC S, V10, P33

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[5] IMPORTANCE OF ELECTRON-SCATTERING WITH COUPLED PLASMON-OPTICAL PHONON MODES IN GAAS PLANAR-DOPED BARRIER TRANSISTORS [J].

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EASTMAN, LF ;

DANDEKAR, NV ;

SMITH, PM .

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[6]

Landau L. D., 1977, QUANTUM MECHANICS NO

[7] PLANAR-DOPED BARRIERS IN GAAS BY MOLECULAR-BEAM EPITAXY [J].

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AUCOIN, TR ;

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EASTMAN, LF .

ELECTRONICS LETTERS, 1980, 16 (22) :836-837

[8] THERMIONIC EMISSION IN BULK UNIPOLAR CAMEL DIODES [J].

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APPLIED PHYSICS LETTERS, 1984, 45 (08) :876-878

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