THE DEPENDENCE OF ETCH RATE OF PHOTO-CVD SILICON-NITRIDE FILMS ON NH4F CONTENT IN BUFFERED HF

被引:10
作者
RATHI, VK
GUPTA, M
AGNIHOTRI, OP
机构
[1] Semiconductor Engineering Laboratory, Department of Physics, Indian Institute of Technology, New Delhi
关键词
D O I
10.1016/0026-2692(95)00017-C
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The influence was studied of the concentration of ammonium fluoride (NH4F) on the etch rates of silicon nitride films deposited by the mercury-sensitized photochemical vapour deposition method. The composition of the buffered HF was varied between 0 and 40 weight percent (wt%) NH4F with 2 to 12 wt% hydrofluoric acid (HF). The etch rates as a function of buffered HF composition were measured for films deposited under various process parameters, viz. reactant gas ratio, substrate temperature and chamber pressure. The results of etch rates as a function of process parameters were correlated to variations in material density and silicon content (Si/N ratio) in the films.
引用
收藏
页码:563 / 567
页数:5
相关论文
共 16 条
[1]  
Aitken J. M., 1981, IEDM, V81, P50
[2]   PHOTO-CVD FOR VLSI ISOLATION [J].
CHEN, JYT ;
HENDERSON, RC ;
HALL, JT ;
PETERS, JW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (09) :2146-2151
[3]   ETCHING OF CVD SI3N4 IN ACIDIC FLUORIDE MEDIA [J].
DECKERT, CA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) :320-323
[4]   MODELING AND DIAGNOSTICS OF SILICON-NITRIDE DEPOSITION FROM 254-NM HG PHOTOSENSITIZATION OF SIH4-NH3 MIXTURES - LUMINESCENCE OF HGNH3 EXCIMER AND LASER-INDUCED FLUORESCENCE OF NH2(A2A1) [J].
FUYUKI, T ;
ALLAIN, B ;
PERRIN, J .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) :3322-3337
[5]   STRUCTURAL AND ELECTRICAL-PROPERTIES OF PHOTO-CVD SILICON-NITRIDE FILM [J].
HAMANO, K ;
NUMAZAWA, Y ;
YAMAZAKI, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (09) :1209-1215
[6]  
JUDGE JS, 1971, J ELECTROCHEM SOC, V118, P1722
[7]  
KERN W, 1968, RCA REV, V29, P556
[8]  
KOHLER WA, 1970, AIME METALL SOC T, V246, P735
[9]   PHOTO-CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE FILM BY DIRECT PHOTOLYSIS [J].
NUMASAWA, Y ;
YAMAZAKI, K ;
HAMANO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (12) :L792-L794
[10]   PHOTOCHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE FILMS [J].
PADMANABHAN, R ;
MILLER, BJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :363-368