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- [1] PHOTOINDUCED METASTABLE SURFACE EFFECTS IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON FILMS[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6628 - 6633AKER, BFRITZSCHE, H
- [2] N-I-P-I DOPING SUPER-LATTICES - TAILORED SEMICONDUCTORS WITH TUNABLE ELECTRONIC-PROPERTIES[J]. FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1983, 23 : 207 - 226DOHLER, GH
- [3] PHONON-ASSISTED TRANSITION RATES .1. OPTICAL-PHONON-ASSISTED HOPPING IN SOLIDS[J]. ADVANCES IN PHYSICS, 1975, 24 (03) : 305 - 348EMIN, D
- [4] CARRIER RECOMBINATION TIMES IN AMORPHOUS-SILICON DOPING SUPERLATTICES[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (16) : 1598 - 1601HUNDHAUSEN, MLEY, LCARIUS, R
- [5] TEMPERATURE-DEPENDENT LIGHT-INDUCED-CHANGES AND ANNEALING OF THE CHANGES IN HYDROGENATED AMORPHOUS-SILICON[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 429 - 432JANG, JKIM, TMHYUN, JKYOON, JHLEE, C
- [6] PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SEMICONDUCTORS[J]. PHYSICAL REVIEW LETTERS, 1984, 53 (16) : 1602 - 1605KAKALIOS, JFRITZSCHE, H
- [7] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS[J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030LANG, DVLOGAN, RAJAROS, M
- [8] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (10) : 635 - 639LANG, DVLOGAN, RA
- [9] OPTICALLY INDUCED EXCESS CONDUCTIVITY IN COMPENSATED A-SI-H FILMS[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 405 - 408MELL, HBEYER, W
- [10] HALL-EFFECT ANALYSIS OF PERSISTENT PHOTOCURRENTS IN N-GAAS LAYERS[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (05) : 401 - 404QUEISSER, HJTHEODOROU, DE