STUDY OF ELECTRON LIFETIME IN P-SI

被引：4

作者：

ABDULLAEV, GB

ISKENDER.ZA

DZHAFAROVA, EA

CHELNOKOV, VE

机构：

来源：

PHYSICA STATUS SOLIDI | 1967年 / 21卷 / 01期

关键词：

D O I：

10.1002/pssb.19670210142

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：423 / +

页数：1

共 20 条

[1]

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[2]

ABDULLAEV GB, 1966, RADIOTEKH ELEKTRON, V11, P1336

[3] RECOMBINATION PROPERTIES OF GOLD IN SILICON [J].

BEMSKI, G .

PHYSICAL REVIEW, 1958, 111 (06) :1515-1518

[4] LIFETIME OF ELECTRONS IN P-TYPE SILICON [J].

BEMSKI, G .

PHYSICAL REVIEW, 1955, 100 (02) :523-524

[5] LIFETIME IN P-TYPE SILICON [J].

BLAKEMORE, JS .

PHYSICAL REVIEW, 1958, 110 (06) :1301-1308

[6]

GALKIN GN, 1961, FIZ TVERD TELA, V3, P2355

[7]

GALKIN GN, 1961, FIZ TVERD TELA, V3, P2850

[8]

GALKIN GN, 1960, FIZ TVERD TELA, V2, P8

[9]

GLINCHUK KD, 1963, FIZ TVERD TELA, V5, P133

[10]

HANNEY NB, 1960, SEMICONDUCTORS ED