NEW SPUTTERING TECHNIQUES FOR SEMICONDUCTOR METALLIZATION

被引：2

作者：

HUGHES, G

RIDGE, C

机构：

来源：

VACUUM | 1984年 / 34卷 / 3-4期

关键词：

D O I：

10.1016/0042-207X(84)90068-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：365 / 369

页数：5

共 9 条

[1] TANTALUM SILICIDE FILMS DEPOSITED BY DC SPUTTERING [J].

ANGILELLO, J ;

BAGLIN, JEE ;

CARDONE, F ;

DEMPSEY, JJ ;

DHEURLE, FM ;

IRENE, EA ;

MACINNES, R ;

PETERSSON, CS ;

SAVOY, R ;

SEGMULLER, AP ;

TIERNEY, E .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) :59-93

[2]

BRAMBILLA C, 1982, JUN MRC SPUTT SCH BA

[3]

HOFFMAN V, 1976, SOLID STATE TECHNOL, V19, P57

[4]

MALEHAM J, 1981, MAR SIRA SEM

[5] RESISTIVITIES OF THIN-FILM TRANSITION-METAL SILICIDES [J].

MURARKA, SP ;

READ, MH ;

DOHERTY, CJ ;

FRASER, DB .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) :293-301

[6] PROPERTIES OF EVAPORATED AND SPUTTERED TASI2 FILMS AND THE INFLUENCE OF THE RESIDUAL-GAS COMPOSITION [J].

NEPPL, F ;

SCHWABE, U .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :508-511

[7]

NICHOLS DR, 1982, MICROELECTRONICS MAN

[8] STEP COVERAGE IN VACUUM DEPOSITION OF THIN METAL-FILMS [J].

TISONE, TC ;

BINDELL, JB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01) :72-76

[9]

VOSSEN JL, 1981, SEMICONDUCTOR INT, V4, P91

← 1 →