LINEAR 2-LAYER MODEL FOR FLAT-BAND SHIFT IN IRRADIATED MOS DEVICES

被引：8

作者：

CHURCHILL, JN ^{[1
]}

HOLMSTROM, FE ^{[1
]}

COLLINS, TW ^{[1
]}

机构：

[1] INT BUSINESS MACHINES CORP,GEN PROD DIV,SAN JOSE,CA

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 04期

关键词：

D O I：

10.1016/0038-1101(76)90025-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：291 / 296

页数：6

共 8 条

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[2]

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[7] VACUUM ULTRAVIOLET RADIATION EFFECTS IN SIO2 [J].

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