INVESTIGATION OF DIFFUSION PARAMETERS OF BOROSILICATE-SILICON SYSTEM BY INFRARED-ABSORPTION

被引：11

作者：

HOFFMANN, G

NAGY, A

PUSKAS, L

机构：

[1] HUNGARIAN ACAD SCI, RES INST TECH PHYS, BUDAPEST, HUNGARY

[2] TUNGSRAM CO, BUDAPEST, HUNGARY

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1975年 / 8卷 / 09期

关键词：

D O I：

10.1088/0022-3727/8/9/009

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1044 / 1052

页数：9

共 16 条

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[7] QUANTITATIVE DETERMINATION OF BORON IN GLASSES USED AS ENCAPSULANTS FOR ELECTRONIC DEVICES [J].

GOYDISH, BL .

MICROCHEMICAL JOURNAL, 1970, 15 (04) :572-&

[8] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[9]

KERN W, 1970, RCA REV, V31, P207

[10]

KERN W, 1971, RCA REV, V32, P429

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