OBSERVATION OF REVERSIBLE COLLAPSE PHENOMENA IN GAAS-MESFETS AT CRYOGENIC TEMPERATURES

被引：3

作者：

CAMIN, DV ^{[1
]}

PESSINA, G ^{[1
]}

PREVITALI, E ^{[1
]}

机构：

[1] IST NAZL FIS NUCL,SEZ MILANO,I-20133 MILAN,ITALY

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 24期

关键词：

FIELD-EFFECT TRANSISTORS; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19911420

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A major change has been verified in the characteristics of GaAs MESFETs at 77K and at 4K after they have been subject to a drain voltage excursion larger than a threshold which depends on the transistor type. MESFETs can be recovered from collapse by inverting the drain and source terminals and applying a voltage excursion of a few volts. The collapse of a 3SK164 double-gate GaAs MESFET after a voltage excursion of 10 V is illustrated as a typical case.

引用

页码：2297 / 2298

页数：2

共 6 条

[1] GALLIUM-ARSENIDE CHARGE-SENSITIVE PREAMPLIFIER FOR OPERATION IN A WIDE LOW-TEMPERATURE RANGE
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