PLASMA ENHANCED BEAM DEPOSITION OF THIN-FILMS AT LOW-TEMPERATURES

[11] LIN BJ, 1979, SPIE, V174, P114

[12] MEINERS LG, 1982, J VAC SCI TECHNOL, V21, P665

[13] INFRARED REFLECTANCE STUDY OF OXIDATION OF ALUMINUM SINGLE-CRYSTALS [J]. SURFACE SCIENCE, 1978, 71 (01) : 161 - 173

[14] ONG E, 1981, P KODAK MICROELECTRO, P91

[15] PETERS JW, 1980, SOLID STATE TECHNOL, V121

[16] COMPARISON OF PROPERTIES OF DIELECTRIC FILMS DEPOSITED BY VARIOUS METHODS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05): : 1064 - 1081

[17] NON-INVASIVE ANALYSIS OF INP SURFACES USING HG-INP SCHOTTKY-BARRIER DIODES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 969 - 971

[18] INSITU MEASUREMENT AND ANALYSIS OF PLASMA-GROWN GAAS OXIDES WITH SPECTROSCOPIC ELLIPSOMETRY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 378 - 385

[19] THORNTON JA, 1978, THIN FILM PROCESSES, P176

[20] ALUMINUM+WATER REACTION [J]. TRANSACTIONS OF THE FARADAY SOCIETY, 1969, 65 (554P): : 561 - +

[11] LIN BJ, 1979, SPIE, V174, P114

[12] MEINERS LG, 1982, J VAC SCI TECHNOL, V21, P665

[13] INFRARED REFLECTANCE STUDY OF OXIDATION OF ALUMINUM SINGLE-CRYSTALS [J]. SURFACE SCIENCE, 1978, 71 (01) : 161 - 173

[14] ONG E, 1981, P KODAK MICROELECTRO, P91

[15] PETERS JW, 1980, SOLID STATE TECHNOL, V121

[16] COMPARISON OF PROPERTIES OF DIELECTRIC FILMS DEPOSITED BY VARIOUS METHODS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05): : 1064 - 1081

[17] NON-INVASIVE ANALYSIS OF INP SURFACES USING HG-INP SCHOTTKY-BARRIER DIODES [J]. APPLIED PHYSICS LETTERS, 1982, 41 (10) : 969 - 971

[18] INSITU MEASUREMENT AND ANALYSIS OF PLASMA-GROWN GAAS OXIDES WITH SPECTROSCOPIC ELLIPSOMETRY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 378 - 385

[19] THORNTON JA, 1978, THIN FILM PROCESSES, P176

[20] ALUMINUM+WATER REACTION [J]. TRANSACTIONS OF THE FARADAY SOCIETY, 1969, 65 (554P): : 561 - +