THE EFFECT OF CRYSTAL DEFECTS ON DEVICE PERFORMANCE AND RELIABILITY

被引：14

作者：

CHIN, AK

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 70卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(84)90320-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：582 / 596

页数：15

共 56 条

[51] RELIABILITY OF HIGH RADIANCE INGAASP-INP LEDS OPERATING IN THE 1.2-1.3 MU-M WAVELENGTH [J].

YAMAKOSHI, S ;

ABE, M ;

WADA, O ;

KOMIYA, S ;

SAKURAI, T .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :167-173

[52] LIQUID-PHASE EPITAXIAL-GROWTH OF INP/INGAASP/INP DOUBLE-HETEROSTRUCTURE WAFERS FREE OF MISFIT DISLOCATIONS [J].

YAMAZAKI, S ;

NAKAJIMA, K ;

KOMIYA, S ;

KISHI, Y ;

AKITA, K .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :82-84

[53] MISFIT DISLOCATIONS IN INP/INGAASP/INP DOUBLE-HETEROSTRUCTURE WAFERS GROWN BY LIQUID-PHASE EPITAXY [J].

YAMAZAKI, S ;

KISHI, Y ;

NAKAJIMA, K ;

YAMAGUCHI, A ;

AKITA, K .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :4761-4766

[54] PERFORMANCE-CHARACTERISTICS AND EXTENDED LIFETIME DATA FOR INGAASP-INP LEDS [J].

YEATS, R ;

CHAI, YG ;

GIBBS, TD ;

ANTYPAS, GA .

ELECTRON DEVICE LETTERS, 1981, 2 (09) :234-236

[55] RELIABILITY OF INGAASP LIGHT-EMITTING-DIODES AT HIGH-CURRENT DENSITY [J].

ZIPFEL, CL ;

CHIN, AK ;

DIGIUSEPPE, MA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :310-316

[56]

ZIPFEL CL, 1981, P INT RELIABILITY PH

← 1 2 3 4 5 6 →