RELIABILITY OF INGAASP LIGHT-EMITTING-DIODES AT HIGH-CURRENT DENSITY

被引：23

作者：

ZIPFEL, CL

CHIN, AK

DIGIUSEPPE, MA

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 04期

关键词：

D O I：

10.1109/T-ED.1983.21122

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：310 / 316

页数：7

共 14 条

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