THE EFFECT OF CRYSTAL DEFECTS ON DEVICE PERFORMANCE AND RELIABILITY

被引：14

作者：

CHIN, AK

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 70卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(84)90320-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：582 / 596

页数：15

共 56 条

[11]

CHIN AK, 1979, AT&T TECH J, V58, P1579, DOI 10.1002/j.1538-7305.1979.tb02270.x

[12]

CHIN AK, 1979, APPL PHYS LETT, V34, P476, DOI 10.1063/1.90840

[13] THE MIGRATION OF GOLD FROM THE P-CONTACT AS A SOURCE OF DARK SPOT DEFECTS IN INP/INGAASP LEDS [J].

CHIN, AK ;

ZIPFEL, CL ;

ERMANIS, F ;

MARCHUT, L ;

CAMLIBEL, I ;

DIGIUSEPPE, MA ;

CHIN, BH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :304-310

[14] EVALUATION OF DEFECTS AND DEGRADATION IN GAAS-GAALAS WAFERS USING TRANSMISSION CATHODOLUMINESCENCE [J].

CHIN, AK ;

KERAMIDAS, VG ;

JOHNSTON, WD ;

MAHAJAN, S ;

ROCCASECCA, DD .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :978-983

[15]

CHIN AK, UNPUB CORRELATION ME

[16]

Cocito M., 1983, CSELT Rapporti Tecnici, V11, P293

[17] HIGH-EFFICIENCY GRADED BAND-GAP GA1-XALXAS LIGHT-EMITTING-DIODES [J].

DAWSON, LR .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (06) :2485-2492

[18] THE EFFECT OF MELT-CARRY-OVER ON THE LPE GROWTH OF PLANAR BURIED INGAASP/INP DOUBLE HETEROSTRUCTURES [J].

DIGIUSEPPE, MA ;

CHIN, AK ;

CHIN, BH ;

LOURENCO, JA ;

CAMLIBEL, I .

JOURNAL OF CRYSTAL GROWTH, 1984, 67 (01) :1-7

[19] THE ORIGIN AND ELIMINATION OF SI PYRAMIDS IN (GA, AL) AS-SI LEDS [J].

DUTT, BV ;

LUDWIG, RA ;

ERMANIS, F .

JOURNAL OF CRYSTAL GROWTH, 1983, 62 (01) :21-26

[20]

DUTT BV, 1981, J ELECTROCHEM SOC, V129, P1573

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