EFFECTS OF LOW WORK FUNCTION METALS ON THE BARRIER HEIGHT OF SULFIDE-TREATED N-TYPE GAAS(100)

被引：4

作者：

SAMARAS, JE

DARLING, RB

机构：

[1] Solid-State Laboratory, Department of Electrical Engineering, FT-10, University of Washington, Seattle

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 01期

关键词：

D O I：

10.1063/1.352153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comparative study of the Schottky barrier height variation on sulfide-treated GaAs(100) surfaces with low work function metal contacts was made using current-voltage and capacitance-voltage measurements. Five different wet chemical sulfide treatments were found to cause little variation in the Sm (0.72 eV) and Mg (0.59 eV) Schottky barrier heights, but caused significant variation in the Al (0.58-0.75 eV) barrier heights when compared to the untreated control diodes. A low temperature (160-degrees-C) anneal was found to cause variation in all of these, uniformly raising the barrier heights of the Sm (+0.07 eV) and Al (+0.04 eV) contacts, and degrading the Mg contacts. These results demonstrate the critical importance of both the reaction specifics and the stability of the interface on the Schottky barrier height.

引用

收藏

页码：168 / 173

页数：6

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