FABRICATION OF DEEP SUB-MU-M NARROW-CHANNEL SI-MOSFETS WITH 2FOLD-GATE STRUCTURES

被引：4

作者：

YOSHIMURA, T

IGURA, Y

ICHIGUCHI, T

MATSUOKA, H

TAKEDA, E

OKAZAKI, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 10期

关键词：

D O I：

10.1143/JJAP.28.2183

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2183 / 2187

页数：5

共 14 条

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