HOT CARRIER HARDNESS ANALYSIS OF SUBMICROMETER LDD DEVICES

被引：14

作者：

HANSCH, W

MAZURE, C

LILL, A

ORLOWSKI, MK

机构：

[1] Siemens AG, Corporate Research and Development, ZFE SPT, 8000

[2] Motorola, Inc., APRDL 3501, Austin

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 03期

关键词：

D O I：

10.1109/16.75160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a detailed analysis of the degradation of various LDD devices. Technology parameters that are varied are gate length, LDD n-dose, and energy for devices with 20-nm gate oxide. Different dc stress conditions are investigated. To gain insight into the degradation process we use a simulation tool that self-consistently calculates the oxide damage during a dc stress experiment. This enables us to obtain the location and amount of oxide charges and interface states due to hot carrier injection. We discuss the relationship between stress-induced damage and device hot carrier hardness.

引用

页码：512 / 517

页数：6

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