GROWTH AND ETCHING OF SILICON IN CHEMICAL VAPOR-DEPOSITION SYSTEMS - INFLUENCE OF THERMAL-DIFFUSION AND TEMPERATURE-GRADIENT

被引：72

作者：

VANDERPUTTE, P ^{[1
]}

GILING, LJ ^{[1
]}

BLOEM, J ^{[1
]}

机构：

[1] UNIV NIJMEGEN,DEPT SOLID STATE CHEM,LAB PHYS,TOERNOOIVELD,NIJMEGEN,NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 31卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(75)90144-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：299 / 307

页数：9

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