CORRELATION BETWEEN LOW-FREQUENCY NOISE AND LOW-TEMPERATURE PERFORMANCE OF TWO-DIMENSIONAL ELECTRON-GAS FETS

被引:14
作者
DIEUDONNE, JM
POUYSEGUR, M
GRAFFEUIL, J
CAZAUX, JL
机构
关键词
D O I
10.1109/T-ED.1986.22534
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:572 / 575
页数:4
相关论文
共 7 条
[1]   SEMICONDUCTOR IMPURITY ANALYSIS FROM LOW-FREQUENCY NOISE SPECTRA [J].
COPELAND, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (01) :50-&
[2]  
DUH KH, 1985, IEEE T ELECTRON DEV, V32, P662
[3]  
DUH KH, 1983, ELEC DEV L, V4, P12
[4]   ON THE COLLAPSE OF DRAIN I-V-CHARACTERISTICS IN MODULATION-DOPED FETS AT CRYOGENIC TEMPERATURES [J].
FISCHER, R ;
DRUMMOND, TJ ;
KLEM, J ;
KOPP, W ;
HENDERSON, TS ;
PERRACHIONE, D ;
MORKOC, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1028-1032
[5]   LOW-FREQUENCY NOISE PHYSICAL ANALYSIS FOR THE IMPROVEMENT OF THE SPECTRAL PURITY OF GAAS-FETS OSCILLATORS [J].
GRAFFEUIL, J ;
TANTRARONGROJ, K ;
SAUTEREAU, JF .
SOLID-STATE ELECTRONICS, 1982, 25 (05) :367-374
[6]   NOISE BEHAVIOR OF 1-MU-M GATE-LENGTH MODULATION-DOPED FETS FROM 10(-2) TO 10(8) HZ [J].
LIU, SM ;
DAS, MB ;
KOPP, W ;
MORKOC, H .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) :453-455
[7]   DEEP-LEVEL ANALYSIS IN (ALGA)AS-GAAS 2-D ELECTRON-GAS DEVICES BY MEANS OF LOW-FREQUENCY NOISE MEASUREMENTS [J].
LORECK, L ;
DAMBKES, H ;
HEIME, K ;
PLOOG, K ;
WEIMANN, G .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (01) :9-11