MEMORY SWITCHING IN SPUTTERED HYDROGENATED AMORPHOUS-SILICON (A-SI-H)

被引：1

作者：

GANGOPADHYAY, S

GEIGER, J

SCHRODER, B

RUBEL, H

ISELBORN, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 10期

关键词：

D O I：

10.1143/JJAP.24.1363

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1363 / 1364

页数：2

共 9 条

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[6] PREPARATION OF LOW DEFECT GRADE A-SI-H FILMS BY RF MAGNETRON SPUTTERING TECHNIQUE [J].

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[9] NEW AMORPHOUS-SILICON ELECTRICALLY PROGRAMMABLE NON-VOLATILE SWITCHING DEVICE [J].

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SPEAR, WE .

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