PHOTOLUMINESCENCE IN HYDROGENATED AMORPHOUS-GERMANIUM (A-GE-H)

被引：11

作者：

NOLL, G

CARIUS, R

FUHS, W

机构：

来源：

SOLID STATE COMMUNICATIONS | 1985年 / 55卷 / 02期

关键词：

D O I：

10.1016/0038-1098(85)90260-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：117 / 120

页数：4

共 11 条

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[2]

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[3] ELECTRONIC-PROPERTIES OF AMORPHOUS SIXGE1-X-H-FILMS [J].

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FUHS, W .

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[4] ELECTRONIC-PROPERTIES OF DOPED GLOW-DISCHARGE AMORPHOUS-GERMANIUM [J].

HAUSCHILDT, D ;

STUTZMANN, M ;

STUKE, J ;

DERSCH, H .

SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :319-330

[5]

JONES DI, 1979, PHILOS MAG B, V39, P147, DOI 10.1080/13642817908246344

[6] LUMINESCENCE AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON [J].

STREET, RA .

ADVANCES IN PHYSICS, 1981, 30 (05) :593-676

[7] LUMINESCENCE STUDIES OF PLASMA-DEPOSITED HYDROGENATED SILICON [J].

STREET, RA ;

KNIGHTS, JC ;

BIEGELSEN, DK .

PHYSICAL REVIEW B, 1978, 18 (04) :1880-1891

[8] ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-GERMANIUM [J].

STUTZMANN, M ;

STUKE, J ;

DERSCH, H .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 115 (01) :141-151

[9] PARAMAGNETIC STATES IN DOPED AMORPHOUS-SILICON AND GERMANIUM [J].

STUTZMANN, M ;

STUKE, J .

SOLID STATE COMMUNICATIONS, 1983, 47 (08) :635-639

[10] INFLUENCE OF SPIN DEFECTS ON RECOMBINATION AND ELECTRONIC TRANSPORT IN AMORPHOUS-SILICON [J].

VOGETGROTE, U ;

KUMMERLE, W ;

FISCHER, R ;

STUKE, J .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 41 (02) :127-140

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