INTERACTIONS OF NITRIC-OXIDE WITH SI(111) AND (100) AT HIGH-TEMPERATURES

被引：17

作者：

HE, DR

SMITH, FW

机构：

来源：

SURFACE SCIENCE | 1985年 / 154卷 / 2-3期

关键词：

D O I：

10.1016/0039-6028(85)90038-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：347 / 356

页数：10

共 17 条

[1] NITRIDATION OF HIGH-PURITY SILICON [J].

ATKINSON, A ;

MOULSON, AJ ;

ROBERTS, EW .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1976, 59 (7-8) :285-289

[2] DIFFUSION OF IMPURITIES INTO EVAPORATING SILICON [J].

BATDORF, RL ;

SMITS, FM .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (02) :259-264

[3]

FEGLEY MB, 1981, J AM CERAM SOC, V64, pC124, DOI 10.1111/j.1151-2916.1981.tb10333.x

[4] INTERACTION OF H2O WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2 [J].

GHIDINI, G ;

SMITH, FW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :2924-2928

[5]

HABRAKEN FHPM, 1983, PHILIPS J RES, V38, P19

[6] NITRIDATION OF SILICON AND OXIDIZED-SILICON [J].

HAYAFUJI, Y ;

KAJIWARA, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) :2102-2108

[7] STUDY OF NITRIDATION OF SILICON SURFACES BY LOW-ENERGY ELECTRON-DIFFRACTION AND AUGE ELECTRON SPECTROSCOPY [J].

HECKINGBOTTOM, R ;

WOOD, PR .

SURFACE SCIENCE, 1973, 36 (02) :594-605

[8] VERY THIN SILICON-NITRIDE FILMS GROWN BY DIRECT THERMAL-REACTION WITH NITROGEN [J].

ITO, T ;

HIJIYA, S ;

NOZAKI, T ;

ARAKAWA, H ;

SHINODA, M ;

FUKUKAWA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :448-452

[9] MASS-SPECTROMETRIC STUDIES OF NITRIDATION OF SILICON [J].

LIN, SS .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1975, 58 (7-8) :271-273

[10] THERMAL NITRIDATION OF SILICON IN AMMONIA GAS - COMPOSITION AND OXIDATION RESISTANCE OF THE RESULTING FILMS [J].

MURARKA, SP ;

CHANG, CC ;

ADAMS, AC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :996-1003

← 1 2 →