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MOCVD GAAS GROWTH ON GE(100) AND SI(100) SUBTRATES

被引：41
作者：
MIZUGUCHI, K
HAYAFUJI, N
OCHI, S
MUROTANI, T
FUJIKAWA, K
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期
关键词：
D O I：
10.1016/0022-0248(86)90345-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：509 / 514
页数：6
相关论文
共 6 条
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[2]  
AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9
[3]   INTERFACE MORPHOLOGY OF EPITAXIAL-GROWTH OF GE ON GAAS AND GAAS ON GE BY MOLECULAR-BEAM EPITAXY [J].
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[4]  
MIZUGUCHI K, 1986, I PHYS C SER, V79, P139
[5]   ANTIPHASE DOMAIN-STRUCTURES IN GAP AND GAAS EPITAXIAL LAYERS GROWN ON SI AND GE [J].
MORIZANE, K .
JOURNAL OF CRYSTAL GROWTH, 1977, 38 (02) :249-254
[6]   POLAR-ON-NONPOLAR EPITAXY - SUB-LATTICE ORDERING IN THE NUCLEATION AND GROWTH OF GAP ON SI (211) SURFACES [J].
WRIGHT, SL ;
INADA, M ;
KROEMER, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :534-539
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