A COMPARISON OF THE DIFFUSION BEHAVIOR OF ION-IMPLANTED SN, GE, AND SI IN GALLIUM-ARSENIDE

被引:18
作者
ALLEN, EL
MURRAY, JJ
DEAL, MD
PLUMMER, JD
JONES, KS
RUBART, WS
机构
[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305
[2] UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611
关键词
D O I
10.1149/1.2085431
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The diffusion behavior of ion-implanted Sn, Ge, and Si in GaAs was investigated as a function of implant dose, temperature, and background doping. Sn and Ge were found to have diffusivities comparable to those of the same species introduced by doping during growth or from surface diffusion. The diffusivity of Si and to a lesser extent that of Ge was very sensitive to implant conditions, and both exhibit dose and time dependence. The different dose dependencies for the three Group IV dopants may indicate the effects of implant damage. Activation energies for diffusion were extracted for the three dopants. Transmission electron micrographs were examined and possible correlations between diffusion behavior and extended defect structure are made.
引用
收藏
页码:3440 / 3449
页数:10
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