BURIED HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS BY GE DIFFUSION FROM THE VAPOR

被引：10

作者：

DEPPE, DG ^{[1
]}

PLANO, WE ^{[1
]}

DALLESASSE, JM ^{[1
]}

HALL, DC ^{[1
]}

GUIDO, LJ ^{[1
]}

HOLONYAK, N ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.99296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：825 / 827

页数：3

共 17 条

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[3] BACKGROUND DOPING DEPENDENCE OF SILICON DIFFUSION IN P-TYPE GAAS [J].

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[4] COUPLED STRIPE ALXGA1-XAS-GAAS QUANTUM-WELL LASERS DEFINED BY IMPURITY-INDUCED (SI) LAYER DISORDERING [J].

DEPPE, DG ;

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THORNTON, RL .

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[5]

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[6]

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[7] IR-RED GAAS-ALAS SUPER-LATTICE LASER MONOLITHICALLY INTEGRATED IN A YELLOW-GAP CAVITY [J].

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[8]

HOLONYAK N, 1983, Patent No. 4378255

[9] PHOTOLUMINESCENCE AND STIMULATED-EMISSION IN SI-DISORDERED AND GE-DISORDERED ALX GA1-X AS-GAAS SUPERLATTICES [J].

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GAVRILOVIC, P ;

MEEHAN, K ;

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JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :101-107

[10]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

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