BE-IMPLANTATION DOPING OF GAASXP1-X/GAP STRAINED-LAYER SUPERLATTICES

被引：33

作者：

MYERS, DR

BIEFELD, RM

FRITZ, IJ

PICRAUX, ST

ZIPPERIAN, TE

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 11期

关键词：

D O I：

10.1063/1.94639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1052 / 1054

页数：3

共 9 条

[1]

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[5] ENCAPSULANT-FREE ANNEALING OF ION-IMPLANTED GAP [J].

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[6] CONSIDERATIONS OF ION CHANNELING FOR SEMICONDUCTOR MICROSTRUCTURE FABRICATION [J].

MYERS, DR ;

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COMAS, J .

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[7]

MYERS DR, 1983, TECHNICAL DIGEST 198, P700

[8] STRAINED-LAYER SUPER-LATTICES FROM LATTICE MISMATCHED MATERIALS [J].

OSBOURN, GC .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1586-1589

[9] ION CHANNELING STUDIES OF INGAAS GAAS STRAINED-LAYER SUPER-LATTICES [J].

PICRAUX, ST ;

DAWSON, LR ;

OSBOURN, GC ;

CHU, WK .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :930-932

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