ON 1/F NOISE IN RECOMBINATION CURRENTS IN P-N-JUNCTIONS

被引：6

作者：

KLEINPENNING, TGM

机构：

[1] Eindhoven Univ of Technology, Dep of, Electrical Engineering, Eindhoven,, Neth, Eindhoven Univ of Technology, Dep of Electrical Engineering, Eindhoven, Neth

来源：

PHYSICA B & C | 1985年 / 132卷 / 03期

关键词：

NOISE; SPURIOUS SIGNAL - Mathematical Models;

D O I：

10.1016/0378-4363(85)90121-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The 1/f noise in p-n junctions, where the current is determined by generation-recombination (g-r) processes in the space-charge region, is discussed in terms of mobility fluctuations. Although the current is determined by g-r processes, it is shown that mobility fluctuations induce current fluctuations. The prevailing ideas that the 1/f noise in g-r currents can only be interpreted in terms of fluctuations in the recombination velocity are contradicted.

引用

页码：364 / 366

页数：3

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