1/F NOISE IN BIPOLAR-TRANSISTORS

被引：13

作者：

GREEN, CT

JONES, BK

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1985年 / 18卷 / 01期

关键词：

D O I：

10.1088/0022-3727/18/1/011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：77 / 91

页数：15

共 28 条

[1] THEORETICAL AND EXPERIMENTAL STUDY OF RECOMBINATION IN SILICON P-N-JUNCTIONS [J].

ASHBURN, P ;

MORGAN, DV ;

HOWES, MJ .

SOLID-STATE ELECTRONICS, 1975, 18 (06) :569-577

[2] 1/F NOISE IN SILICON-WAFERS [J].

BLACK, RD ;

WEISSMAN, MB ;

RESTLE, PJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6280-6289

[3] HALL-EFFECT, ANISOTROPY, AND TEMPERATURE-DEPENDENCE MEASUREMENTS OF 1/F NOISE IN SILICON ON SAPPHIRE [J].

BLACK, RD ;

RESTLE, PJ ;

WEISSMAN, MB .

PHYSICAL REVIEW B, 1983, 28 (04) :1935-1943

[4] IONIZING-RADIATION EFFECTS ON CONDUCTION AND LOW-FREQUENCY NOISE IN BIPOLAR-TRANSISTORS [J].

BLASQUEZ, G ;

ROUXNOGATCHEWSKY, M .

REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (11) :1599-1605

[5] CONDUCTION AND LOW-FREQUENCY NOISE PHENOMENA ASSOCIATED WITH SURFACE REGIONS OF P-N-JUNCTIONS - APPLICATION TO JUNCTION TRANSISTOR [J].

BLASQUEZ, G .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (01) :207-218

[6] ON THEORY OF LOGARITHMIC SILICON DIODES [J].

BUCKINGH.MJ ;

FAULKNER, EA .

RADIO AND ELECTRONIC ENGINEER, 1969, 38 (01) :33-+

[7]

DHARIWAL SR, 1977, SOLID STATE ELECTRON, V20, P476

[8]

GRANT AJ, 1978, SPRINGER SERIES ELEC, V2, P175

[9]

GREEN CT, 1983, THESIS U LANCASTER

[10]

GREEN CT, 1985, J PHYS D

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