CONDUCTION AND LOW-FREQUENCY NOISE PHENOMENA ASSOCIATED WITH SURFACE REGIONS OF P-N-JUNCTIONS - APPLICATION TO JUNCTION TRANSISTOR

[1] BLASQUEZ G, 1973, THESIS TOULOUSE

[2] EXCESS SURFACE CURRENTS IN P-N JUNCTIONS AND BIPOLAR TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (08) : 693 - &

[3] SURFACE RECOMBINATION IN SEMICONDUCTORS [J]. SURFACE SCIENCE, 1968, 9 (02) : 347 - +

[4] Grove A.S., 1991, Physics and Technology of Semiconductor Devices, P388

[5] SURFACE STATE RELATED 1/F NOISE IN MOS TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (11) : 1451 - +

[6] LEE CA, 1958, B AM PHYS SOC, V3, P12

[7] McWhorter A. L., 1957, 1/f noise and germanium surface properties semiconductor surface physics, P207, DOI DOI 10.1063/1.3060496

[8] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

[9] Plumb J., 1963, IEEE T ELECTRON DEV, V10, P304

[10] van der Ziel A., 1959, Fluctuation Phenomena in Semiconductors

[1] BLASQUEZ G, 1973, THESIS TOULOUSE

[2] EXCESS SURFACE CURRENTS IN P-N JUNCTIONS AND BIPOLAR TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (08) : 693 - &

[3] SURFACE RECOMBINATION IN SEMICONDUCTORS [J]. SURFACE SCIENCE, 1968, 9 (02) : 347 - +

[4] Grove A.S., 1991, Physics and Technology of Semiconductor Devices, P388

[5] SURFACE STATE RELATED 1/F NOISE IN MOS TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (11) : 1451 - +

[6] LEE CA, 1958, B AM PHYS SOC, V3, P12

[7] McWhorter A. L., 1957, 1/f noise and germanium surface properties semiconductor surface physics, P207, DOI DOI 10.1063/1.3060496

[8] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

[9] Plumb J., 1963, IEEE T ELECTRON DEV, V10, P304

[10] van der Ziel A., 1959, Fluctuation Phenomena in Semiconductors