DISPERSION OF THE LINEWIDTH ENHANCEMENT FACTOR IN SEMICONDUCTOR INJECTION-LASERS

被引：19

作者：

OGASAWARA, N

ITO, R

TONE, K

NAKAE, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 07期

关键词：

D O I：

10.1143/JJAP.23.L518

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L518 / L520

页数：3

相关论文

共 23 条

[1] CASEY HC, 1978, HETEROSTRUCTURE LA A, P175
[2] THERMAL PROPERTIES OF GALLIUM ARSENIDE LASER STRUCTURES
GOOCH, CH
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (04) : 140 - &
[3] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN
HAKKI, BW
PAOLI, TL
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4113 - 4119
[4] MEASUREMENT OF THE LINEWIDTH ENHANCEMENT FACTOR-ALPHA OF SEMICONDUCTOR-LASERS
HARDER, C
VAHALA, K
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (04) : 328 - 330
[5] MEASUREMENTS OF THE SEMICONDUCTOR-LASER LINEWIDTH BROADENING FACTOR
HENNING, ID
COLLINS, JV
[J]. ELECTRONICS LETTERS, 1983, 19 (22) : 927 - 929
[6] SPECTRAL DEPENDENCE OF THE CHANGE IN REFRACTIVE-INDEX DUE TO CARRIER INJECTION IN GAAS-LASERS
HENRY, CH
LOGAN, RA
BERTNESS, KA
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4457 - 4461
[7] THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS
HENRY, CH
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (02) : 259 - 264
[8] ACCURATE DETERMINATION OF TEMPERATURE RISE IN BURRUS-TYPE LEDS BY USING RESONANT REFLECTION SPECTRA
KAMATA, N
KAMIYA, T
YANAI, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (04) : 379 - 384
[9] OBSERVATIONS OF SELF-FOCUSING IN STRIPE GEOMETRY SEMICONDUCTOR-LASERS AND DEVELOPMENT OF A COMPREHENSIVE MODEL OF THEIR OPERATION
KIRKBY, PA
GOODWIN, AR
THOMPSON, GHB
SELWAY, PR
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 705 - 719
[10] LATERAL TRANSVERSE-MODE INSTABILITY AND ITS STABILIZATION IN STRIPE GEOMETRY INJECTION-LASERS
LANG, R
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) : 718 - 726