MODIFIED GROWTH THEORY FOR HIGH SUPERSATURATION

被引：32

作者：

VOIGTLAENDER, K ^{[1
]}

RISKEN, H ^{[1
]}

KASPER, E ^{[1
]}

机构：

[1] AEG TELEFUNKEN,FORSCHUNGSINST,D-7900 ULM,FED REP GER

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1986年 / 39卷 / 01期

关键词：

D O I：

10.1007/BF01177161

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：31 / 36

页数：6

共 16 条

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[8] EPITAXY OF SI(111) AS STUDIED WITH A NEW HIGH RESOLVING LEED SYSTEM [J].

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[10]

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