P-TYPE ZNSE-N PREPARED BY ELECTRON-CYCLOTRON RESONANCE RADICAL BEAM DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：28

作者：

OHTSUKA, T

HORIE, K

机构：

[1] Central Research & Development Center, Victor Company of Japan Ltd., Yokosuka, 239

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 2B期

关键词：

ZNSE; P-TYPE; ECR PLASMA; PHOTOLUMINESCENCE; C-V MEASUREMENT;

D O I：

10.1143/JJAP.32.L233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnSe doped with nitrogen(N) has been prepared by molecular beam epitaxy using N2*, N* nitrogen radicals, N2+ ions and N atoms from an electron cyclotron resonance nitrogen plasma source. N-doped ZnSe/GaAs heteroepitaxial layers showed p-type conduction with net acceptor concentrations as high as 1.8 x 10(18) cm-3, and the activation rate of N atoms was 60%. Photoluminescence spectra measured at 7 K from p-type ZnSe:N layers with net acceptor concentrations higher than 10(18) cm-3 were dominated by two different donor-acceptor pair emission bands with zero phonon energies of 2.684 eV and 2.697 eV.

引用

页码：L233 / L235

页数：3

共 13 条

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OLEGO, DJ
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[12] CHARACTERIZATION OF NITROGEN-DOPED ZNSE AND ZNS0.06SE0.94 FILMS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
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KAN, Y
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[13] P-TYPE CONDUCTIVITY CONTROL OF ZNSE HIGHLY DOPED WITH NITROGEN BY METALORGANIC MOLECULAR-BEAM EPITAXY
TAIKE, A
MIGITA, M
YAMAMOTO, H
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (20) : 1989 - 1991

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