INFRARED SPECTROSCOPICAL AND TEM INVESTIGATIONS OF OXYGEN PRECIPITATION IN SILICON-CRYSTALS WITH MEDIUM AND HIGH OXYGEN CONCENTRATIONS

被引：49

作者：

GAWORZEWSKI, P

HILD, E

KIRSCHT, FG

VECSERNYES, L

机构：

[1] AKAD WISSENSCH DDR,INST HALBLEITERPHYS,DDR-1200 FRANKFURT,GER DEM REP

[2] RES INST TELECOMMUN,H-1525 BUDAPEST,HUNGARY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 85卷 / 01期

关键词：

D O I：

10.1002/pssa.2210850116

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results of IR spectroscopic as well HVTEM investigations are given on the precipitation of oxygen in Si due to heat treatment within the temperature range 600 to 1275 degree C. Four different kinds of precipitates exist, in dependence on the temperature of heat treatment and the thermal history of the samples. For temperatures T greater than equivalent to 900 degree C precipitation occurs by the growth of as-grown microprecipitates.

引用

页码：133 / 147

页数：15

共 35 条

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