OXYGEN-RELATED DONORS FORMED AT 600-DEGREES-C IN SILICON IN DEPENDENCE ON OXYGEN AND CARBON CONTENT

被引：39

作者：

GAWORZEWSKI, P

SCHMALZ, K

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 77卷 / 02期

关键词：

D O I：

10.1002/pssa.2210770221

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：571 / 582

页数：12

共 21 条

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[9] COMPARISON OF 2 KINDS OF OXYGEN DONORS IN SILICON BY RESISTIVITY MEASUREMENTS
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