GA-AS INTERMIXING IN GAAS(001) RECONSTRUCTIONS

被引：23

作者：

FALTA, J

TROMP, RM

COPEL, M

PETTIT, GD

KIRCHNER, PD

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.48.5282

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using high-resolution medium-energy ion scattering, we have determined the surface As and Ga coverages of the c(4 X 4), c(2 X 8), (2 X 4), (2 X 6), and c(8 X 2) reconstructions of GaAs(001). All surfaces are more Ga rich than predicted by current structural models. The results are explained in terms of charge neutrality and Coulomb repulsion between As lone-pair orbitals, leading to As replacement by Ga in the first and second surface layers.

引用

页码：5282 / 5288

页数：7

共 32 条

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