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CHARACTERISTICS OF ALGAAS GAAS QUANTUM-WELL DELTA-DOPED CHANNEL FET (QUADFET)

被引：8
作者：
HONG, WP
ZRENNER, A
KIM, OH
HARBISON, J
FLOREZ, L
DEROSA, F
机构：
[1] Bellcore, Red Bank
[2] Department of Physics, Technical University of Munich
[3] Bellcore, Red Bank
[4] Department of Electrical Engineering, POSTECH
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 08期
关键词：
Electron Energy Subbands - Gate Length - MODFET's - Quantum-Well Delta-Doped Channel FET (QUADFET) - Transport Properties - Two-Dimensional Electron Gas;
D O I：
10.1109/16.57147
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated the transport properties of a two-dimensional electron gas in Al0.3Ga0.7 As/GaAs quantum-well delta-doped heterostructures. Electron energy subbands in the quantum well were calculated by a self-consistent method. The FET’s having a gate length of 1.3 µm showed a transconductance as high as 340 mS/mm. The FET’s also showed a broad plateau of transconductance around its peak, that is not typical in MODFET’s. © 1990 IEEE
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页码：1924 / 1926
页数：3
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