TRANSPORT-PROPERTIES OF TWO-DIMENSIONAL ELECTRON-GAS SYSTEMS IN DELTA-DOPED SI-IN0.53GA0.47AS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：20

作者：

HONG, WP

DEROSA, F

BHAT, R

ALLEN, SJ

HAYES, JR

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 05期

关键词：

D O I：

10.1063/1.100951

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：457 / 459

页数：3

共 7 条

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APPLIED PHYSICS LETTERS, 1988, 53 (04) :293-295

[6] ELECTRON-MOBILITY ENHANCEMENT AND ELECTRON-CONCENTRATION ENHANCEMENT IN DELTA-DOPED N-GAAS AT T=300K [J].

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[7]

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