ELECTRON-MOBILITY ENHANCEMENT AND ELECTRON-CONCENTRATION ENHANCEMENT IN DELTA-DOPED N-GAAS AT T=300K

被引：117

作者：

SCHUBERT, EF

CUNNINGHAM, JE

TSANG, WT

机构：

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 63卷 / 07期

关键词：

D O I：

10.1016/0038-1098(87)90859-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：591 / 594

页数：4

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