IMPURITY SCATTERING EFFECTS ON ELECTRON-TRANSPORT IN SHORT GAAS CHANNELS

被引:3
作者
SINGH, J [1 ]
BAJAJ, KK [1 ]
机构
[1] USAF,WRIGHT AERONAUT LABS,AVION LAB,WRIGHT PATTERSON AFB,OH 45433
关键词
D O I
10.1063/1.334394
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2048 / 2050
页数:3
相关论文
共 11 条
[1]   DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].
DENNARD, RH ;
GAENSSLEN, FH ;
YU, HN ;
RIDEOUT, VL ;
BASSOUS, E ;
LEBLANC, AR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268
[2]  
Eden R. C., 1980, Very large scale integration (VLSI). Fundamentals and applications, P128
[3]   HIGH-FIELD TRANSPORT IN GALLIUM-ARSENIDE AND INDIUM-PHOSPHIDE [J].
FAWCETT, W ;
HERBERT, DC .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (09) :1641-1654
[4]   MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].
FAWCETT, W ;
BOARDMAN, AD ;
SWAIN, S .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&
[5]  
GRODIN RO, 1984, IEEE T ELECTRON DEVI, V31, P21
[6]   TRANSIENT VELOCITY CHARACTERISTICS OF ELECTRONS IN GAAS WITH GAMMA-L-X CONDUCTION-BAND ORDERING [J].
KRATZER, S ;
FREY, J .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :4064-4068
[7]   TRANSIENT AND STEADY-STATE ELECTRON-TRANSPORT PROPERTIES OF GAAS AND INP [J].
MALONEY, TJ ;
FREY, J .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (02) :781-787
[8]   HIGH ELECTRON-MOBILITY TRANSISTOR LOGIC [J].
MIMURA, T ;
JOSHIN, K ;
HIYAMIZU, S ;
HIKOSAKA, K ;
ABE, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) :L598-L600
[9]   ELECTRON-TRANSPORT IN SUB-MICRON GAAS-CHANNELS AT 300-K [J].
NAG, BR ;
ROY, MD .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (02) :65-70