MECHANICAL-PROPERTIES OF HEAT-TREATED CZ-SI WAFERS FROM BRITTLE TO DUCTILE TEMPERATURE-RANGE

被引:23
作者
YASUTAKE, K
MURAKAMI, J
UMENO, M
KAWABE, H
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 05期
关键词
D O I
10.1143/JJAP.21.L288
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L288 / L290
页数:3
相关论文
共 15 条
[1]   BENDING DEFORMATION OF MAGNESIUM OXIDE [J].
BRUNEAU, AA ;
PRATT, PL .
PHILOSOPHICAL MAGAZINE, 1962, 7 (83) :1871-&
[2]   THE PLASTIC-DEFORMATION OF SILICON BETWEEN 300-DEGREES-C AND 600-DEGREES-C [J].
CASTAING, J ;
VEYSSIERE, P ;
KUBIN, LP ;
RABIER, J .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 44 (06) :1407-1413
[3]   DEFORMATION TWINNING IN MATERIALS OF THE A4 (DIAMOND) CRYSTAL STRUCTURE [J].
CHURCHMAN, AT ;
GEACH, GA ;
WINTON, J .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1956, 238 (1213) :194-&
[4]   EFFECT OF OXYGEN ON DISLOCATION MOVEMENT IN SILICON [J].
HU, SM ;
PATRICK, WJ .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :1869-1874
[5]   OXYGEN CONTENT OF SILICON SINGLE CRYSTALS [J].
KAISER, W ;
KECK, PH .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :882-887
[6]  
KUGIMIYA K, 1981, SEMICONDUCTOR SILICO, P294
[7]   WARPAGE OF SILICON-WAFERS [J].
LEROY, B ;
PLOUGONVEN, C .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) :961-970
[8]   A NEW INTRINSIC GETTERING TECHNIQUE USING MICRODEFECTS IN CZOCHRALSKI SILICON CRYSTAL - A NEW DOUBLE PREANNEALING TECHNIQUE [J].
NAGASAWA, K ;
MATSUSHITA, Y ;
KISHINO, S .
APPLIED PHYSICS LETTERS, 1980, 37 (07) :622-624
[9]  
NISHIDA M, 1963, 12TH P JPN NAT C APP, P69
[10]   INSITU OBSERVATIONS ON DYNAMIC PROCESSES ASSOCIATED WITH STACKING-FAULTS AND DEFORMATION TWINS IN SILICON-CRYSTALS [J].
SATO, M ;
SUMINO, K .
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (11) :1351-1355