THE POLYCENTER CRYSTALLIZATION OF AMORPHOUS-SILICON LAYERS AT PULSE ANNEALING

被引：6

作者：

BALANDIN, VY

DVURECHENSKII, AV

ALEKSANDROV, LN

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 73卷 / 02期

关键词：

D O I：

10.1002/pssa.2210730236

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：587 / 592

页数：6

共 8 条

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[3]

BOLOTOV VV, 1980, QUESTIONS RAD TECHNO

[4] INFLUENCE OF THE THICKNESS OF DAMAGED LAYERS ON THE MIGRATION OF DOPANDS DURING LASER ANNEALING IN IMPLANTED SILICON [J].

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JAHN, U .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 63 (02) :K203-K206

[5] CRYSTALLIZATION OF ION-IMPLANTED SILICON LAYERS BY THE NANOSECOND LASER-PULSES [J].

ROMANOV, SI ;

KACHURIN, GA ;

SMIRNOV, LS ;

KHAIBULLIN, IB ;

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BAJAZITOV, RM .

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[6]

SPAEPEN F, 1979, LASER SOLID INTERACT, P73

[7] MACROSCOPIC THEORY OF PULSED-LASER ANNEALING .1. THERMAL TRANSPORT AND MELTING [J].

WOOD, RF ;

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PHYSICAL REVIEW B, 1981, 23 (06) :2923-2942

[8]

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