TEMPERATURE-DEPENDENCE OF TRANSPORT-PROPERTIES IN SELECTIVELY DOPED GAAS/AL0.3GA0.7AS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：20

作者：

SANO, N

KATO, H

CHIKA, S

机构：

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 49卷 / 02期

关键词：

D O I：

10.1016/0038-1098(84)90777-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：123 / 125

页数：3

共 13 条

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