INTERFACE STABILITY IN ELECTROLYTIC DECOMPOSITION OF SILICON DIOXIDE FILMS AT ELEVATED-TEMPERATURES

被引：1

作者：

HINZE, JW

BAKER, JA

PATTERSO.JW

机构：

[1] IOWA STATE UNIV, ENGN RES INST, AMES, IA 50010 USA

[2] IOWA STATE UNIV, DEPT MET, AMES, IA 50010 USA

来源：

关键词：

D O I：

10.1149/1.2401680

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1328 / 1332

页数：5

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