RAPID THERMAL ANNEALING OF 200-DEGREES-C MERCURY IMPLANTS INTO INP

Elevated-temperature (200 degree C) implants of 10**1**4 and 10**1**5 Hg ions cm** minus **2 at 100 keV have been successfully activated by rapid thermal annealing at temperatures of 750-850 degree C using a novel dual layer of Si//3N//4 and AlN as an encapsulant. P-type activity was found for all samples, yielding maximum hole concentrations of approximately H//v equals 8 multiplied by 10**1**7 cm** minus **3 and mobilities of 100 cm**2/V s. Sheet carrier concentrations were found to increase with temperature for 60s anneals, giving a value of 0. 8 eV for the 'activation energy' of Hg implants in InP. Longer annealing times resulted in a degradation of the encapsulant and a corresponding reduction in electrical properties.