SHALLOW P-TYPE LAYERS IN INP BY HG IMPLANTATION

被引：9

作者：

FAVENNEC, PN

LHARIDON, H

ROQUAIS, JM

SALVI, M

LECLEACH, X

GOUSKOV, L

机构：

[1] UNIV MONTPELLIER 2,CTR ELECTR MONTPELLIER,F-34060 MONTPELLIER,FRANCE

[2] INST UNIV TECH,F-22300 LANNION,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 02期

关键词：

D O I：

10.1063/1.96981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：154 / 156

页数：3

共 12 条

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[2]

BINET M, 1979, ELECTRON LETT, V11, P580

[3] IMPLANTATION AND PH3 AMBIENT ANNEALING OF INP [J].

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[4]

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[5] PLANAR GUARDED AVALANCHE-DIODES IN INP FABRICATED BY ION-IMPLANTATION [J].

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GROVES, SH .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :74-76

[6] THE EFFECT OF IMPLANT TEMPERATURE ON THE ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED INDIUM-PHOSPHIDE [J].

DONNELLY, JP ;

HURWITZ, CE .

SOLID-STATE ELECTRONICS, 1980, 23 (09) :943-948

[7]

Favennec P. N., 1984, Semi-Insulating III-V materials, P26

[8]

FAVENNEC PN, 1985, C GALLIUM ARSENIDE R

[9] ELECTRICAL CHARACTERIZATION OF CONDUCTING THIN-FILMS BY A MICROWAVE CONTACTLESS METHOD [J].

LECLEACH, X ;

BELLEC, M ;

GRANDPIERRE, G .

REVUE DE PHYSIQUE APPLIQUEE, 1982, 17 (08) :481-490

[10] SHALLOW P+ LAYERS IN IN0.53GA0.47AS BY HG IMPLANTATION [J].

LHARIDON, H ;

FAVENNEC, PN ;

SALVI, M ;

RAZEGHI, M .

ELECTRONICS LETTERS, 1985, 21 (03) :122-124

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