SHALLOW P+ LAYERS IN IN0.53GA0.47AS BY HG IMPLANTATION

被引：3

作者：

LHARIDON, H ^{[1
]}

FAVENNEC, PN ^{[1
]}

SALVI, M ^{[1
]}

RAZEGHI, M ^{[1
]}

机构：

[1] THOMSON CSF,LCR,F-91401 ORSAY,FRANCE

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 03期

关键词：

D O I：

10.1049/el:19850085

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：122 / 124

页数：3

共 7 条

[1]

Duchemin J.-P., 1979, INST PHYS CONF SE, V45, P10

[2] TUNNELING CURRENTS IN IN0.53GA0.47AS HOMOJUNCTION DIODES AND DESIGN OF INGAAS-INP HETERO-STRUCTURE AVALANCHE PHOTO-DIODES [J].

ITO, M ;

KANEDA, T ;

NAKAJIMA, K ;

TOYAMA, Y ;

ANDO, H .

SOLID-STATE ELECTRONICS, 1981, 24 (05) :421-424

[3] GROWTH AND CHARACTERIZATION OF INP USING METALORGANIC CHEMICAL VAPOR-DEPOSITION AT REDUCED PRESSURE [J].

RAZEGHI, M ;

DUCHEMIN, JP .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :76-82

[4] BERYLLIUM IMPLANTATION DOPING OF INGAAS [J].

TELL, B ;

LEHENY, RF ;

LIAO, ASH ;

BRIDGES, TJ ;

BURKHARDT, EG ;

CHANG, TY ;

BEEBE, ED .

APPLIED PHYSICS LETTERS, 1984, 44 (04) :438-440

[5] COMPARISON OF ION-IMPLANTED BE AND CD AS P-TYPE DOPANTS IN GA0.47IN0.53AS [J].

VESCAN, L ;

SELDERS, J ;

MAIER, M ;

KRAUTLE, H ;

BENEKING, H .

JOURNAL OF CRYSTAL GROWTH, 1984, 67 (02) :353-357

[6] BE-IMPLANTED PARA-NORMAL JUNCTIONS IN GA0.47IN0.53AS [J].

VESCAN, L ;

SELDERS, J ;

KRAUTLE, H ;

KUTT, W ;

BENEKING, H .

ELECTRONICS LETTERS, 1982, 18 (12) :533-534

[7] BE-IMPLANTED IN0.53GA0.47AS DIODES WITH IDEAL FORWARD CURRENT-VOLTAGE CHARACTERISTICS [J].

ZEMEL, A ;

TELL, B ;

LEHENY, RF ;

HARRISON, T ;

BRIDGES, TJ ;

BURKHARDT, EG ;

LIAO, ASH ;

BEEBE, ED .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1856-1858

← 1 →