COMPARISON OF ION-IMPLANTED BE AND CD AS P-TYPE DOPANTS IN GA0.47IN0.53AS

被引：11

作者：

VESCAN, L

SELDERS, J

MAIER, M

KRAUTLE, H

BENEKING, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 67卷 / 02期

关键词：

D O I：

10.1016/0022-0248(84)90195-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：353 / 357

页数：5

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